Search results for "effect [finite size]"

The WHAAM Application: a Tool to Support the Evidence-Based Practice in the Functional Behaviour Assessment

2018

BackgroundThe most recent computing technologies can promote the application of evidence-based practice (EBP) in the field of applied behaviour analysis (ABA).ObjectiveThe study describes how the use of technology can simplify the application of EBPs in ABA.MethodsThe Web Health Application for ADHD Monitoring (WHAAM) application demonstrates this in the following two case studies. We are monitoring dysfunctional behaviours, collecting behavioural data, performing systematic direct observations, creating both visual baseline and intervention charts and evaluating the planned interventions using the TAU-U statistical index.ResultsSignificant positive changes of children’s problem behaviours …

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

2016

The transfer characteristics (ID-VG) of multilayers MoS2 transistors with a SiO2/Si backgate and Ni source/drain contacts have been measured on as-prepared devices and after annealing at different temperatures (T-ann from 150 degrees C to 200 degrees C) under a positive bias ramp (V-G from 0 V to + 20 V). Larger T-ann resulted in a reduced hysteresis of the ID-VG curves (from similar to 11 V in the as-prepared sample to similar to 2.5 V after Tann at 200 degrees C). The field effect mobility (similar to 30 cm(2) V-1 s(-1)) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n-type behaviour in the as-prepared device to the…

Random Structural Modification of a Low-Band-Gap BODIPY-Based Polymer

2017

International audience; A BODIPY thiophene polymer modified by extending conjugation of the BODIPY chromophore is reported. This modification induces tunability of energy levels and therefore absorption wavelengths in order to target lower energies.

Hysteresis in graphene nanoribbon field-effect devices

2020

Hysteresis in the current response to a varying gate voltage is a common spurious effect in carbon-based field effect transistors. Here, we use electric transport measurements to probe the charge transport in networks of armchair graphene nanoribbons with a width of either 5 or 9 carbon atoms, synthesized in a bottom-up approach using chemical vapor deposition. Our systematic study on the hysteresis of such graphene nanoribbon transistors, in conjunction with temperature-dependent transport measurements shows that the hysteresis can be fully accounted for by trapping/detrapping carriers in the SiO2 layer. We extract the trap densities and depth, allowing us to identify shallow traps as the …

A Zone-Casting Technique for Device Fabrication of Field-Effect Transistors Based on Discotic Hexa-peri-hexabenzocoronene

2005

Fabrication of carbon nanotube-based field-effect transistors for studies of their memory effects

2007

Carbon nanotube‐based field‐effect transistors (CNTFETs) have been fabricated using nanometer thin dielectric material as the gate insulator film. The demonstrated fabrication technique is highly suitable for preparing devices with low contact resistances between the electrodes and the carbon nanotube, down to 14 kΩ. Electronic transport measurements of the fabricated devices have been conducted on more than 70 FETs. Hysteretic behavior in the transfer characteristics of some CNTFETs was observed.

Structural and Electrical Transport Properties of Si doped GaN nanowires

2016

The control and assessment of doping in GaN nanostructures are crucial for the realization of GaN based nanodevices. In this study, we have investigated a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2–3 µm in length, and 20–200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have revealed a controlled doping with resistivity from 2 × 10−2 to 10−3 Ω.cm for Si doped NWs. Field effect tra…

Porphyrins and BODIPY as Building Blocks for Efficient Donor Materials in Bulk Heterojunction Solar Cells

2017

International audience; Advances in the synthesis and application of highly efficient polymers and small molecules over the last two decades have enabled the rapid advancement in the development of organic solar cells and photovoltaic technology as a promising alternative to conventional solar cells, based on silicon and other inorganic semiconducting materials. Among the different types of organic semiconducting materials, porphyrins and BODIPY-based small molecules and conjugated polymers attract high interest as efficient semiconducting organic materials for dye sensitized solar cells and bulk heterojunction organic solar cells. The highest power conversion efficiency exceeding 9% has be…

Noncovalent Functionalization and Passivation of Black Phosphorus with Optimized Perylene Diimides for Hybrid Field Effect Transistors

2020

Amongst the different existing methods to passivate black phosphorus (BP) from environmental degradation, the noncovalent functionalization with perylene diimides (PDI) has been postulated as one of the most promising routes because it allows preserving its electronic properties. This work describes the noncovalent functionalization and outstanding environmental protection of BP with tailor made PDI having peri-amide aromatic side chains, which include phenyl and naphthyl groups, exhibiting a significantly increased molecule-BP interaction. These results are rationalized by density functional theory (DFT) calculations showing that the adsorption energies are mainly governed by van der Waals…

Surface plasmon effects on carbon nanotube field effect transistors

2011

Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of 0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range. peerReviewed